| 摘要 |
<p>PURPOSE: A variable resistance memory device, a manufacturing method thereof, and a driving method thereof are provided to minimize a performance variation due to the position of a selected memory cell in an array by reducing a voltage drop and a signal transmission delay for driving a selection device. CONSTITUTION: A plurality of memory cells include a variable resistor (150) and a selection device (125) which is serially connected to the variable resistor. The memory cells are arranged in a first direction and a second direction. The first direction is different from the second direction. A common line (110a,110b) applies a common reference voltage to the ends of the memory cells. A plurality of wiring lines (160_1,160_2,160_3) are electrically connected to the other ends of the memory cells arranged in the first direction. A plurality of selection lines (170_1,170_2,170_3) are combined with each selection device of the memory cells.</p> |
