发明名称 |
Integrated circuit and manufacturing method |
摘要 |
<p>Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.</p> |
申请公布号 |
EP2629084(A1) |
申请公布日期 |
2013.08.21 |
申请号 |
EP20120156028 |
申请日期 |
2012.02.17 |
申请人 |
NXP B.V. |
发明人 |
MERZ, MATTHIAS;HUMBERT, AURELIE;TIO CASTRO, DAVID;FALEPIN, ANNELIES |
分类号 |
G01N25/18;B81C1/00;H01L23/58;H01L27/00 |
主分类号 |
G01N25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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