发明名称 Integrated circuit and manufacturing method
摘要 <p>Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.</p>
申请公布号 EP2629084(A1) 申请公布日期 2013.08.21
申请号 EP20120156028 申请日期 2012.02.17
申请人 NXP B.V. 发明人 MERZ, MATTHIAS;HUMBERT, AURELIE;TIO CASTRO, DAVID;FALEPIN, ANNELIES
分类号 G01N25/18;B81C1/00;H01L23/58;H01L27/00 主分类号 G01N25/18
代理机构 代理人
主权项
地址