发明名称 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES
摘要 <p>Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.</p>
申请公布号 EP2279518(A4) 申请公布日期 2013.08.21
申请号 EP20090739984 申请日期 2009.05.01
申请人 INTERMOLECULAR, INC. 发明人 SHANKER, SUNIL;CHIANG, TONY
分类号 H01L21/205;C23C16/04;C23C16/455;C23C16/509;H01J37/32 主分类号 H01L21/205
代理机构 代理人
主权项
地址