| 摘要 |
PROBLEM TO BE SOLVED: To reduce a gate voltage dependency of a power MOS transistor, and to obtain a good on-resistance. SOLUTION: The power MOS transistor includes a gate electrode 9 embedded in a trench. A region surrounded by a trench 5 as viewed from above is a transistor cell and the power MOS transistors having various cell sizes differing from each other are formed on an identical semiconductor substrate. The body diffusion layer of the power MOS transistor 6b having a relatively small cell size is formed deeper compared with the power MOS transistor 6a having a relatively large cell size. COPYRIGHT: (C)2010,JPO&INPIT |
