Semiconductor device with a peripheral base region

摘要

The present invention relates to a semiconductor device and has an object to enhance a di / dt tolerance and a dV / dt tolerance without increasing an ON resistance. In order to achieve the object described above, an underpad base region (5) provided on a region in an upper main surface of a semiconductor substrate (1) which is provided under a gate pad (12) is not connected to a source electrode (11) and is not coupled to a main base region (4) connected to the source electrode (11). More specifically, the underpad base region (5) is brought into a floating state.