发明名称 |
A METHOD OF FORMING A MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT |
摘要 |
<p>In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.</p> |
申请公布号 |
EP2263256(B1) |
申请公布日期 |
2013.08.21 |
申请号 |
EP20090729975 |
申请日期 |
2009.04.10 |
申请人 |
SANDISK 3D LLC |
发明人 |
SCHEUERLEIN, ROY, E.;ILKBAHAR, ALPER;SCHRICKER, APRIL, D. |
分类号 |
B82Y10/00;G11C13/00;G11C13/02;H01L27/10;H01L27/102;H01L51/00 |
主分类号 |
B82Y10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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