| 摘要 |
<p>PURPOSE: A spilt gate device and a manufacturing method thereof are provided to simultaneously manufacture a metal selection gate and a metal oxide semiconductor transistor by using high-k dielectric metal gate technology. CONSTITUTION: A substrate with a top surface is provided (102). A storage element is formed on the substrate (104). A control gate is formed on the storage element (106). A high-k dielectric layer is partially formed on the side of the control gate, the side of the storage element, and the top surface of the substrate (108). A metal selection gate is formed on the high-k dielectric layer (110). [Reference numerals] (102) Substrate with a top surface is provided; (104) Storage element is formed on a substrate; (106) Control gate is formed on a storage element; (108) High-k dielectric layer is partially formed on the side of a control gate, the side of a storage element, and the top surface of a substrate; (110) Metal selection gate is formed on the high-k dielectric layer near a storage element and a control gate</p> |
