发明名称 |
Application of fluorine doped tin (IV) oxide SnO2:F for making a heating layer on a photovoltaic panel, and the photovoltaic panel |
摘要 |
The invention consists in application of fluorine doped tin (IV) oxide SnO 2 :F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO 2 :F, with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon, inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO 2 :F and the photovoltaic cell (5). |
申请公布号 |
EP2629337(A1) |
申请公布日期 |
2013.08.21 |
申请号 |
EP20120460005 |
申请日期 |
2012.02.16 |
申请人 |
ML SYSTEM SP. Z.O.O. |
发明人 |
BORATYNSKI, PAWEL;SKUPIEN, KRZYSZTOF;STANEK, EDYTA;CYCON, DAWID |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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