| 摘要 |
In one general aspect, a silicon carbide bipolar junction transistor (BJT) can include a collector region, a base region on the collector region, and an emitter region on the base region. The silicon carbide BJT can include a base contact electrically contacting the base region where the base region having an active part interfacing the emitter region. The silicon carbide BJT can also include an intermediate region of semiconductor material having at least a part extending from the active part of the base region to the base contact where the intermediate region having a doping level higher than a doping level of the active part of the base region. |
