Low-voltage structure for high-voltage electrostatic discharge protection

摘要

An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+ doped buried layer to form a collector region. The P-type well region may be disposed proximate to remaining portions of the N+ doped buried layer and having at least a P+ doped plate corresponding to a base region and distributed segments of N+ doped plates corresponding to an emitter region.