发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a first group configured to include a first bank and a second bank; a second group configured to include a third bank and a fourth bank; an address strobe pulse generating unit configured to generate an address strobe pulse signal for activating the first group and the second group in response to a first bank address and a command signal; and a strobe signal generating unit configured to generate a strobe signal that selects a bank from the first group and the second group in response to the address strobe pulse signal and a second bank address.
申请公布号 US8514650(B2) 申请公布日期 2013.08.20
申请号 US20100914319 申请日期 2010.10.28
申请人 CHA JAE-HOON;PARK KI-CHON;HYNIX SEMICONDUCTOR INC. 发明人 CHA JAE-HOON;PARK KI-CHON
分类号 G11C8/12 主分类号 G11C8/12
代理机构 代理人
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