发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a first group configured to include a first bank and a second bank; a second group configured to include a third bank and a fourth bank; an address strobe pulse generating unit configured to generate an address strobe pulse signal for activating the first group and the second group in response to a first bank address and a command signal; and a strobe signal generating unit configured to generate a strobe signal that selects a bank from the first group and the second group in response to the address strobe pulse signal and a second bank address.
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申请公布号 |
US8514650(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US20100914319 |
申请日期 |
2010.10.28 |
申请人 |
CHA JAE-HOON;PARK KI-CHON;HYNIX SEMICONDUCTOR INC. |
发明人 |
CHA JAE-HOON;PARK KI-CHON |
分类号 |
G11C8/12 |
主分类号 |
G11C8/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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