发明名称 Semiconductor memory device
摘要 A driver circuit having a redundant control function to store address data of a defective memory cell is provided to compensate a defect of a memory cell array. In other words, address data of a defective memory cell is stored not by using part of the memory cell array, but by using a non-volatile memory, which is provided in a memory controller, to store address data of a defective memory cell. The memory controller storing the address data of a defective memory cell contributes an increase in process speed, because it is not necessary to access the memory cell array in order to obtain the address data of the defective memory cell.
申请公布号 US8514642(B2) 申请公布日期 2013.08.20
申请号 US201113005561 申请日期 2011.01.13
申请人 KOYAMA JUN;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOYAMA JUN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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