METHODS AND APPARATUS FOR DOPED SIGE SOURCE/DRAIN STRESSOR DEPOSITION

摘要

PURPOSE: A method and a device thereof for the deposition of a doped SiGe source/drain stressor are provided to improve the performance of a PMOS transistor by enhancing the carrier mobility. CONSTITUTION: Gate structures (13,15) are located on surface a semiconductor substrate (21). A source region (22) and a drain region (24) are formed inside the semiconductor substrate. The source region and the drain region comprise a recessed part (23). A stressor material in which layers are doped with boron is inserted into the recessed part. The boron doped stressor material forming the layers within the recess is an epitaxial SiGe.