发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method comprising the steps of: forming a copper film (101) on a Cu barrier film (100); forming a mask material (102) on the copper film (101); anisotropically etching the copper film (101) until the Cu barrier film (100) is exposed, using the mask material (102) as a mask; and removing the mask material (102) and subsequently forming a plating film (104) that contains a substance for suppressing copper diffusion on the anisotropically etched copper film (101), using an electroless plating method that utilizes a selective deposition in which catalytic action occurs with respect to the copper film (101) but not the Cu barrier film (100). |
申请公布号 |
KR20130092570(A) |
申请公布日期 |
2013.08.20 |
申请号 |
KR20137004760 |
申请日期 |
2011.07.29 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HAYAKAWA TAKASHI;HARA KENICHI;TANAKA TAKASHI |
分类号 |
H01L21/768;H01L21/265;H01L21/28;H01L21/3205 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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