| 摘要 |
A semiconductor device has a semiconductor substrate, a pair of diffusion layers formed in a predetermined regions of the semiconductor substrate, a gate insulation film formed on a region of the semiconductor substrate being interposed between the pair of the diffusion layers, a gate electrode formed on the gate insulation film, insulation films formed on the sides of the gate electrode, each of the insulation films being constructed from one or more layers, sidewall spacers formed on the sides of the gate electrode while the insulation films are interposed between the sidewall spacers and the gate electrode, and highly doped diffusion layers formed in the diffusion layers except for the parts under the insulation films and the sidewall spacers. |
