发明名称 |
ESD field-effect transistor and integrated diffusion resistor |
摘要 |
An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a first field-effect transistor and a diffusion resistor of higher electrical resistance may be formed as different portions of a doped region. The diffusion resistor, which is directly coupled with the drain of the first field-effect transistor, may be defined using an isolation region of dielectric material disposed in the doped region and selective silicide formation. The electrostatic discharge protection device may also include a second field-effect transistor having a drain as a portion the doped region that is directly coupled with the diffusion resistor and indirectly coupled by the diffusion resistor with the drain of the first field-effect transistor.
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申请公布号 |
US8513738(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US201113188094 |
申请日期 |
2011.07.21 |
申请人 |
CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;LI JUNJUN;MISHRA RAHUL;MUHAMMAD MUJAHID;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;LI JUNJUN;MISHRA RAHUL;MUHAMMAD MUJAHID |
分类号 |
H01L23/60 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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