发明名称 |
Magnetic tunnel junction having coherent tunneling structure |
摘要 |
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
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申请公布号 |
US8513752(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US201213613006 |
申请日期 |
2012.09.13 |
申请人 |
PENG XILIN;NIKOLAEV KONSTANTIN;POKHIL TARAS;SAPAZHNIKOV VICTOR;CHEN YONGHUA;SEAGATE TECHNOLOGY LLC |
发明人 |
PENG XILIN;NIKOLAEV KONSTANTIN;POKHIL TARAS;SAPAZHNIKOV VICTOR;CHEN YONGHUA |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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