Semiconductor device and method for manufacturing same

摘要

A semiconductor device includes: a substrate made of silicon carbide and having a main surface having an off angle of not less than -3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction; a p type layer made of silicon carbide and formed on the main surface of the substrate by means of epitaxial growth; and an oxide film formed in contact with a surface of the p type layer. A maximum value of nitrogen atom concentration is 1×1021 cm-3 or greater in a region within 10 nm from an interface between the p type layer and the oxide film.