发明名称 |
Methods of forming phase-changeable memory devices including an adiabatic layer |
摘要 |
Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
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申请公布号 |
US8513051(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US20100708742 |
申请日期 |
2010.02.19 |
申请人 |
HA YONG-HO;KUH BONG-JIN;YI JI-HYE;BAE JUN-SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA YONG-HO;KUH BONG-JIN;YI JI-HYE;BAE JUN-SOO |
分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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地址 |
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