发明名称 Plasma processing apparatus and plasma processing method
摘要 A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4@D@1.3×n/4 (n being a natural number).
申请公布号 US8513137(B2) 申请公布日期 2013.08.20
申请号 US201213620497 申请日期 2012.09.14
申请人 OHMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO;ROHM CO., LTD.;TADAHIRO OHMI 发明人 OHMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO
分类号 H01L21/302;H05H1/46;C23C16/511;C23F4/00;H01J37/32;H01L21/3065;H01L21/31;H01L21/461 主分类号 H01L21/302
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