发明名称 |
Plasma processing apparatus and plasma processing method |
摘要 |
A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4@D@1.3×n/4 (n being a natural number).
|
申请公布号 |
US8513137(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US201213620497 |
申请日期 |
2012.09.14 |
申请人 |
OHMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO;ROHM CO., LTD.;TADAHIRO OHMI |
发明人 |
OHMI TADAHIRO;INO KAZUHIDE;ARAKAWA TAKAHIRO |
分类号 |
H01L21/302;H05H1/46;C23C16/511;C23F4/00;H01J37/32;H01L21/3065;H01L21/31;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|