发明名称 CHEMICAL MECHANICAL POLISHING CLEANING COPOSITION AND THE CLEANING METHOD THEREWITH
摘要 PURPOSE: A chemical-mechanical polishing detergent composition, and a cleaning method using the same are provided to remove an organic material pollution layer on the copper surface in a cleaning process after a copper chemical-mechanical polishing process, and to obtain an oxide film which is maintained stably until a subsequent process. CONSTITUTION: A liquid detergent composition comprises: an organic solvent comprising KOH or/and TMAH; a chelate reagent comprising EDTA and/or arginine; an anticorrosive agent; and pure water. To the total amount of the liquid detergent composition, the organic solvent, chelate reagent, and anticorrosive agent are comprised in a ratio of 1-10 wt%, 1-10 wt%, and 0.2-2 wt%respectively. A cleaning method of a copper chemical-mechanical polishing process comprises the steps of: polishing the surface of copper chemical-mechanically; and cleaning the polished copper surface using the liquid detergent composition. [Reference numerals] (AA) Example 2-1
申请公布号 KR20130092096(A) 申请公布日期 2013.08.20
申请号 KR20120013601 申请日期 2012.02.10
申请人 K.C.TECH CO., LTD. 发明人 KIM, JUNG YOON;YOON, YOUNG HO;YERRIBONIA NAGENDRA PRASAD;HWANG, JIN MYUNG;PARK, HAN TEO
分类号 C11D7/50;C09K3/14;C11D7/22 主分类号 C11D7/50
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