发明名称 Write control circuit and semiconductor device
摘要 In a semiconductor device and a write control circuit, a voltage detection unit detects a write voltage supplied to a storage element (electrical fuse element) in which only single writing is electrically performed and, when the write voltage is equal to or more than a predetermined threshold voltage, allows the write control unit to stop writing to the electrical fuse element regardless of the write signal. The above processing permits the write control circuit to suppress false writing caused by the fact that abnormality occurs in a write voltage and it becomes an overvoltage.
申请公布号 US8514638(B2) 申请公布日期 2013.08.20
申请号 US201113316520 申请日期 2011.12.11
申请人 KOYASHIKI TSUYOSHI;NAGAYAMA JUN;ISODA MASAHITO;AWAYA TOMOHARU;FUJITSU SEMICONDUCTOR LIMITED 发明人 KOYASHIKI TSUYOSHI;NAGAYAMA JUN;ISODA MASAHITO;AWAYA TOMOHARU
分类号 G11C7/00 主分类号 G11C7/00
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