发明名称 |
Photoelectric conversion device and manufacturing method thereof |
摘要 |
A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.
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申请公布号 |
US8513046(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US201113252299 |
申请日期 |
2011.10.04 |
申请人 |
HIURA YOSHIKAZU;ISAKA FUMITO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HIURA YOSHIKAZU;ISAKA FUMITO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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