| 发明名称 |
Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials |
| 摘要 |
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
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| 申请公布号 |
US8512586(B2) |
申请公布日期 |
2013.08.20 |
| 申请号 |
US201113223906 |
申请日期 |
2011.09.01 |
| 申请人 |
TABAT MARTIN D.;OLSEN CHRISTOPHER K.;SHAO YAN;MACCRIMMON RUAIRIDH;TEL EPION INC. |
发明人 |
TABAT MARTIN D.;OLSEN CHRISTOPHER K.;SHAO YAN;MACCRIMMON RUAIRIDH |
| 分类号 |
H01L21/306;H01L21/02;H01L21/26;H01L21/302 |
主分类号 |
H01L21/306 |
| 代理机构 |
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