发明名称 |
Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same |
摘要 |
Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG channel is an off region where the density of a 2DEG is reduced or zero. The entire upper material layer may be continuous and may have a uniform thickness. A region of the upper material layer under the gate contains an impurity for reducing or eliminating a lattice constant difference between the lower and upper material layers.
|
申请公布号 |
US8513705(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US20100923126 |
申请日期 |
2010.09.03 |
申请人 |
KIM JONG-SEOB;HONG KI-HA;OH JAE-JOON;CHOI HYUK-SOON;WHANG IN-JUN;SHIN JAI-KWANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-SEOB;HONG KI-HA;OH JAE-JOON;CHOI HYUK-SOON;WHANG IN-JUN;SHIN JAI-KWANG |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|