发明名称 Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same
摘要 Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG channel is an off region where the density of a 2DEG is reduced or zero. The entire upper material layer may be continuous and may have a uniform thickness. A region of the upper material layer under the gate contains an impurity for reducing or eliminating a lattice constant difference between the lower and upper material layers.
申请公布号 US8513705(B2) 申请公布日期 2013.08.20
申请号 US20100923126 申请日期 2010.09.03
申请人 KIM JONG-SEOB;HONG KI-HA;OH JAE-JOON;CHOI HYUK-SOON;WHANG IN-JUN;SHIN JAI-KWANG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JONG-SEOB;HONG KI-HA;OH JAE-JOON;CHOI HYUK-SOON;WHANG IN-JUN;SHIN JAI-KWANG
分类号 H01L29/778;H01L21/335 主分类号 H01L29/778
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