Nitride semiconductor device and manufacturing method of the device

摘要

A nitride semiconductor device includes a first nitride semiconductor layer having a C-plane as a growth surface, and unevenness in an upper surface; and a second nitride semiconductor layer formed on the first nitride semiconductor layer to be in contact with the unevenness, and having p-type conductivity. The second nitride semiconductor layer located directly on a sidewall of the unevenness has a p-type carrier concentration of 1×1018/cm3 or more.