发明名称 Method for producing compound semiconductor light-emitting device
摘要 It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.
申请公布号 US8513118(B2) 申请公布日期 2013.08.20
申请号 US201113236934 申请日期 2011.09.20
申请人 TANIMOTO YOSHIMI;SONODA TAKANORI;SHARP KABUSHIKI KAISHA 发明人 TANIMOTO YOSHIMI;SONODA TAKANORI
分类号 H01L21/44;H01L21/00;H01L33/00 主分类号 H01L21/44
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