| 摘要 |
According to one embodiment, a magnetic memory includes a magnetoresistive element includes a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is variable and a nonmagnetic layer disposed between the fixed layer and the recording layer. A direction of a read current is set to a first direction in a case where an expression of MR ratio >=|Ic+/Ic-|-1 is satisfied if a critical current of the first direction used to write the magnetoresistive element to the parallel state is set to Ic- and a critical current of a second direction used to write the magnetoresistive element to the anti-parallel state is set to Ic+.
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