发明名称 |
Memory devices having select gates with P type bodies, memory strings having separate source lines and methods |
摘要 |
Memory devices and methods of operating memory devices are shown. Configurations described include a memory cell string having an elongated n type body region and having select gates with p type bodies. Configurations and methods shown can provide a reliable bias to a body region for memory operations such as erasing. |
申请公布号 |
US8514620(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US20100955448 |
申请日期 |
2010.11.29 |
申请人 |
GODA AKIRA;MICRON TECHNOLOGY, INC. |
发明人 |
GODA AKIRA |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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