发明名称 LIGHT EMITTING DIODE ELEMENT WITH WAVELENGTH CONVERSION LAYER
摘要 PROBLEM TO BE SOLVED: To provide a light emitting diode element with a wavelength conversion layer which can prevent the eutectic bonding from failing in connecting a substrate.SOLUTION: A light-emitting diode element 2 has semiconductor stacking layers 22, 24, 26, and electrodes 28 are bonded with a base 12. A side wall 7 of the light-emitting diode element 2 has an upper surface 8 and a lower surface 10, and the lower surface 10 is closer to the base 12 than the upper surface 8 is. A wavelength conversion layer 4 covers only a top surface 6 of the light-emitting diode element 2 and the upper surface 8, and does not cover the lower surface 10.
申请公布号 JP2013162130(A) 申请公布日期 2013.08.19
申请号 JP20130020468 申请日期 2013.02.05
申请人 SHOGEN KODEN KOFUN YUGENKOSHI 发明人 WANG CHIH-MING;CHEN CHAO-HSING;SHEN CHIEN-FU
分类号 H01L33/50;H01L33/44;H01L33/62 主分类号 H01L33/50
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