| 摘要 |
PURPOSE: A semiconductor device is provided to reduce plasma damage to oxide semiconductor by laminating a different protective insulator layer. CONSTITUTION: A transistor includes a first gate electrode (11), a first gate insulating layer (13), an oxide semiconductor layer (16), a second gate insulating layer, and a second gate electrode (19). The first gate insulating layer is formed on the first gate electrode. The oxide semiconductor layer is formed on the first gate insulating layer. The second gate insulating layer is formed on the oxide semiconductor layer. The second gate electrode is formed on the second gate insulating layer. |
