| 摘要 |
PROBLEM TO BE SOLVED: To improve the adhesion between a nitride semiconductor layer and a light reflective electrode layer without reducing an optical reflectance.SOLUTION: A semiconductor light-emitting element comprises: a semiconductor laminate including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor laye of a second conductivity type formed on the active layer; a first transparent reflective electrode layer including a first transparent conductive film intermittently formed on a part of the second semiconductor layer and a first reflective electrode film intermittently formed in a part in which the first transparent conductive film of the second semiconductor layer is not formed; a second transparent reflective electrode layer including a second transparent conductive film intermittently formed so that a part of the first transparent conductive film overlaps a part of the first transparent reflective electrode layer and a second reflective electrode film intermittently formed so that a part of the first reflective electrode film overlaps a part in which the second transparent conductive film of the first transparent reflective electrode layer is not formed; and a wiring electrode formed in contact with the first semiconductor layer. |
