RESISTANCE CHANGE TYPE MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a resistance change type memory element capable of restraining deterioration of reliability.SOLUTION: A resistance change type memory element according to the present embodiment comprises: a first electrode; a second electrode having a metal element; and a resistance change layer having a first layer provided between the first electrode and the second electrode and including amorphous silicon, and a second layer provided between the first layer and the first electrode and including polypyrrole or its derivative.