| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem occurring when a metal is deposited on polymer such as a substrate and a gate insulation film that a leak path is formed because the metal penetrates the polymer and a damage layer is generated thereby to cause deterioration in characteristics; and a problem of processability such that a taper angle of an electrode is not constant.SOLUTION: A thin film transistor of the present embodiment comprises a substrate; a gate electrode, a gate insulation film, a semiconductor layer, and source, and drain electrodes. The thin film transistor uses a low-resistance altered layer which is formed by irradiation of ion beams on the substrate composed of an organic material and the gate insulation film as an electrode. |
