| 摘要 |
PROBLEM TO BE SOLVED: To use a reference memory cell to generate a reference current used when reading data from a nonvolatile memory cell; reduce the occurrence of a read failure; and reduce a chip size.SOLUTION: A nonvolatile memory cell array includes a plurality of nonvolatile memory cells that are provided correspondingly to intersections between word lines and bit lines. The plurality of nonvolatile memory cells include: main memory cells that are used to write and read data via bit lines; and reference memory cells that supply a reference current to a sense amplifier which outputs a signal according to a result of comparison between current, which flows via the bit lines into the main memory cells that are selected as data readout destinations by selecting word lines, and the reference current. |
