| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure device capable of forming an exposure latent image precisely corresponding to a mask pattern image to a deep part in a thickness direction even on a thick photoresist.SOLUTION: An exposure device 10 for exposing a photoresist having sensitivity to a visible light region and having lower sensitivity in the visible light region than in an ultraviolet region sequentially comprises: an illumination optical system 1; a mask stage 18; a projection lens system 20; and a projection exposure stage 22. An object workpiece 23 on which the photoresist is formed is provided on the projection exposure stage 22, and a mask 18a for forming a mask pattern image into the photoresist is provided on the mask stage 18. A wavelength selection diaphragm 14 is arranged on an optical path of the illumination optical system 1. An ultraviolet beam/visible light transmission part for transmitting light of a wavelength of an ultraviolet region and light of a visible light region is formed at a center of the wavelength selection diaphragm 14, and an ultraviolet beam transmitting part for transmitting the light of the wavelength of the ultraviolet region is formed on a peripheral part, respectively. |
