| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of preventing crack of a substrate in application of flash light, and a heat treatment method.SOLUTION: An upper flash lamp UFL is provided above a chamber 6 for housing a semiconductor wafer W, and a lower flash lamp LFL is provided below the chamber 6. Flash light from the upper flash lamp UFL and flash light from the lower flash lamp LFL are applied to a rear surface of the semiconductor wafer W at a time. Thereby temperature distribution generates that the surface temperature and the rear surface temperature of the semiconductor wafer W reach to the maximum temperature, and the inside temperature in a thickness direction reaches to the minimum temperature. Therefore a tensile stress generated due to a thermal expansion of the surface and the rear surface of the semiconductor wafer W acts on the inside in the thickness direction. Therefore, even if blem is formed on the rear surface, it is possible to prevent crack taking the blem as a starting point, of the semiconductor wafer W in application of flash light. |
