| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a thin film having a thickness of 1 nm or less on the surface of a workpiece while controlling the thickness by utilizing plasma.SOLUTION: A plurality of microwaves 5 are introduced in a processing container 2 and, by using a plasma processing apparatus 1 of plasma generation system, plasma is generated while limiting the total power of the plurality of microwaves below 1 W/cmper area of a wafer W. In the plasma oxidation processing, rare gas for plasma generation and an oxygen-containing gas are used, the treatment temperature is set at 100°C or below, and the average oxidation rate during 30 seconds after start of microwave supply is set to 0.03 nm/sec or less. Impedance matching is not performed when igniting plasma by a plurality of microwaves, but performed when treating the wafer W by plasma. |
