发明名称 METHOD FOR PREPARING SAMPLE AND METHOD FOR ANALYZING SAMPLE
摘要 PROBLEM TO BE SOLVED: To provide a method for preparing a sample whose rear surface has been thinned in parallel to the surface of the sample, and a method of analysis using the sample.SOLUTION: Vertical holes whose side walls are formed in a tapered shape are formed from the surface of a sample. Polishing is performed from the rear surface of the sample until the vertical holes are penetrated. Because the side walls are tapered, the cross-sectional shapes and areas of second vertical holes 200a to 200c which are observed from the rear surface vary according to the difference in the thickness of remaining films after polishing. By performing polishing while making adjustment so as to equalize the cross-sectional shapes and areas, a sample whose rear surface has been thinned in parallel to the surface of the sample can be easily prepared.
申请公布号 JP2013160667(A) 申请公布日期 2013.08.19
申请号 JP20120023746 申请日期 2012.02.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OGARANE DAISUKE
分类号 G01N1/28;G01N1/32;G01N27/62 主分类号 G01N1/28
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