| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing the concentration of an electrical field near a boundary region between a diode region and an IGBT region without providing an ineffective region in the diode region.SOLUTION: A semiconductor device 10 includes a diode region 20 and an IGBT region 30. The IGBT region 30 has a trench gate electrode 46. At a boundary between the diode region 20 and the IGBT region 30, an isolation trench 60 is formed. A lower end portion of the isolation trench 60 is formed at a position deeper than a lower end portion of the trench gate electrode 46. In the isolation trench 60, an isolation insulating layer 62 and a buried electrode 64 is formed. A lower end portion of the buried electrode 64 is formed at a depth between an upper end portion 70 of a depletion layer extending over the diode region 20 when the semiconductor device 10 is turned off and the lower end portion of the trench gate electrode 46. The buried electrode 64 has the same potential as that of an anode electrode and an emitter electrode. |
