| 发明名称 |
REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE |
| 摘要 |
<p>Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by a gate oxide layer (82) having a high dielectric constant and polysilicon (81,83) concentrated at the interfaces with the metal gate electrode (100) and substrate (10).</p> |
| 申请公布号 |
KR20130091784(A) |
申请公布日期 |
2013.08.19 |
| 申请号 |
KR20137019581 |
申请日期 |
2006.11.02 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAN JAMES;PELLERIN JOHN |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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