| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition having excellent lithography characteristics and a resist pattern forming method.SOLUTION: A resist composition generates acid by exposure and has solubility in developer which is changed by action of acid. The composition includes a base component (A) whose solubility in the developer changes by the action of acid, and the base component (A) contains a resin component (A1) having a constitutional unit (a0) represented by a formula (a0) [Rrepresents a fluorinated alkyl group, v1 represents an integer of 1 to 5, and v2 represents an integer of 0 to 4. Zrepresents an organic cation]. |
