发明名称 |
METHOD FOR MANUFACTURING CAPACITOR, CAPACITOR, AND METHOD FOR FORMING DIELECTRIC FILM USED FOR THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor capable of compatibly attaining a higher dielectric constant and a lower leakage current, a capacitor, and a method for forming a dielectric film used for such a capacitor.SOLUTION: A method for manufacturing a capacitor comprises the steps of: forming a lower electrode layer on a substrate; forming a first TiOfilm having an interface control function on the lower electrode; forming a ZrO-based film on the first TiOfilm; annealing the ZrO-based film for crystallizing ZrOof the ZrO-based film after forming the ZrO-based film; forming a second TiOfilm functioning as a capacitance film on the ZrO-based film; and forming an upper electrode layer on the second TiOfilm. |
申请公布号 |
JP2013161988(A) |
申请公布日期 |
2013.08.19 |
申请号 |
JP20120023469 |
申请日期 |
2012.02.06 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KAZUMURA TAMOTSU;AKIYAMA KOJI;HISHIYA SHINGO;HARADA TAKESHIGE |
分类号 |
H01L21/8242;C23C16/40;H01L21/316;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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