| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce a chip area of the semiconductor memory device by reducing a voltage metal line of a bank region. CONSTITUTION: A core region (100) includes a bank (110) and a voltage metal line (120) for supplying an internal clamping voltage to the bank. A peripheral region (200) includes a voltage generating circuit (210) for generating the internal clamping voltage. The voltage generating circuit includes an internal voltage generating unit and an internal clamping voltage generating unit. The internal voltage generating unit generates an internal voltage. The internal clamping voltage generating unit generates the internal clamping voltage by clamping the internal voltage generated in the internal voltage generating unit. [Reference numerals] (210) Voltage generating circuit |
