| 摘要 |
PURPOSE: An inductively coupled plasma processing method and an inductively coupled plasma processing apparatus are provided to obtain desired processing distribution under the condition where it is difficult to generate inductively coupled plasma in the whole substrate like high pressure condition. CONSTITUTION: A process chamber (4) performs plasma processing by accommodating a substrate. A mount stand (23) mounts the substrate in the process chamber. A process gas supply system (20) supplies a processing gas into the process chamber. An antenna unit is arranged planarly in correspondence to the substrate in the process chamber and has a radio frequency antenna to generate inductively coupled plasma. A radio frequency power supply unit supplies radio frequency power to the radio frequency antenna. The radio frequency antenna includes an outer antenna (13a) and an inner antenna (13b). The outer antenna forms outer induced electric field by receiving the radio frequency power. The inner antenna is prepared with the concentric shape in the inside of the outer antenna, and forms inner induced electric field by receiving the radio frequency power. A controller (100) generates local plasma by the inner induced electric field and the outer induced electric field formed at a part corresponding to the inner antenna and the outer antenna by making a relatively large current flow to the inner antenna and the outer antenna, and then processes the plasma. [Reference numerals] (100) Controller; (101) User interface; (102) Memory unit; (20) Process gas supply system; (30) Exhaust device |
