| 摘要 |
PURPOSE: A 3D nonvolatile memory device and a manufacturing method thereof are provided to supply the 3D nonvolatile memory device with high integration by preventing crosstalk between adjacent memory cells without combining a rectifying device. CONSTITUTION: A wiring stack(ST) includes a conductive line which is vertically laminated on a substrate(10). A data storage layer(SL) is formed on the sidewall of the wiring stack. The data storage layer includes a first data storage layer(SL1) and a second data storage layer(SL2) to face each other. A channel layer(CH) is extended cross conductive lines. A gate electrode(GE) is formed on a gate insulation layer(GI) in contact with the channel layer. |
