| 摘要 |
Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact with the substrate processing area; and a plasma source including a first antenna for providing first induced electromotive force for generating plasma onto a central area of the substrate processing area through the dielectric window and a second antenna for providing second induced electromotive force for generating the plasma onto an outer area of the substrate processing area, wherein a TSV is formed at a target substrate within the substrate processing area by repeatedly performing a deposition process and an etch process using the plasma generated through the dual inductively coupled plasma source. |
