发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving reliability of the semiconductor device by fully exhibiting a gettering effect.SOLUTION: A method for manufacturing a semiconductor device comprises: a first step of forming a gettering region 18 for capturing an impurity inside a semiconductor substrate 2 by modifying the inside of the semiconductor substrate 2 irradiating the semiconductor substrate 2 with a laser beam L1 so that the gettering region does not intersect with a scheduled cutting line 5 which is set to run between adjacent functional elements 25 when viewed from a thickness direction of the semiconductor substrate 2; a second step of forming the plurality of functional elements 25 on a surface 2a of the semiconductor substrate 2 after the first step; and a third step of obtaining a plurality of semiconductor devices including one functional element 25 by cutting at least the semiconductor substrate 2 for each of the functional elements 25 along the scheduled cutting line 5 which is set to run between the adjacent functional elements 25 after the second step.
申请公布号 JP2013157449(A) 申请公布日期 2013.08.15
申请号 JP20120016793 申请日期 2012.01.30
申请人 HAMAMATSU PHOTONICS KK 发明人 SAKAMOTO TSUYOSHI;SANO IKU
分类号 H01L21/301;B23K26/00;B23K26/38;B23K26/40;H01L21/304;H01L21/322 主分类号 H01L21/301
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