发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving reliability of the semiconductor device by fully exhibiting a gettering effect.SOLUTION: A method for manufacturing a semiconductor device comprises: a first step of forming a gettering region 18 for capturing an impurity inside a semiconductor substrate 2 by modifying the inside of the semiconductor substrate 2 irradiating the semiconductor substrate 2 with a laser beam L1 so that the gettering region does not intersect with a scheduled cutting line 5 which is set to run between adjacent functional elements 25 when viewed from a thickness direction of the semiconductor substrate 2; a second step of forming the plurality of functional elements 25 on a surface 2a of the semiconductor substrate 2 after the first step; and a third step of obtaining a plurality of semiconductor devices including one functional element 25 by cutting at least the semiconductor substrate 2 for each of the functional elements 25 along the scheduled cutting line 5 which is set to run between the adjacent functional elements 25 after the second step. |
申请公布号 |
JP2013157449(A) |
申请公布日期 |
2013.08.15 |
申请号 |
JP20120016793 |
申请日期 |
2012.01.30 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
SAKAMOTO TSUYOSHI;SANO IKU |
分类号 |
H01L21/301;B23K26/00;B23K26/38;B23K26/40;H01L21/304;H01L21/322 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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