发明名称 SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can form an alloy layer on a semiconductor substrate without using a plating method.SOLUTION: A semiconductor element manufacturing method comprises: a sheet arrangement process of arranging a metal sheet 31 on a principal surface 2a of a semiconductor substrate 2; and an annealing process of forming an alloy layer 23 at a junction part between the semiconductor substrate 2 and the metal sheet 31 by annealing the semiconductor substrate 2 and the metal sheet 31.
申请公布号 JP2013157564(A) 申请公布日期 2013.08.15
申请号 JP20120019010 申请日期 2012.01.31
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 TANIFUJI AKIHITO
分类号 H01L21/329;H01L21/28;H01L21/285;H01L29/861;H01L29/868 主分类号 H01L21/329
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