发明名称 |
SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can form an alloy layer on a semiconductor substrate without using a plating method.SOLUTION: A semiconductor element manufacturing method comprises: a sheet arrangement process of arranging a metal sheet 31 on a principal surface 2a of a semiconductor substrate 2; and an annealing process of forming an alloy layer 23 at a junction part between the semiconductor substrate 2 and the metal sheet 31 by annealing the semiconductor substrate 2 and the metal sheet 31. |
申请公布号 |
JP2013157564(A) |
申请公布日期 |
2013.08.15 |
申请号 |
JP20120019010 |
申请日期 |
2012.01.31 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
TANIFUJI AKIHITO |
分类号 |
H01L21/329;H01L21/28;H01L21/285;H01L29/861;H01L29/868 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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