| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit with improved reliability of an ESD protection circuit.SOLUTION: An integrated circuit according to an embodiment comprises: a first transistor whose first external terminal is connected to a drain and whose second external terminal is connected to a source; and a protection circuit provided in parallel with the first transistor between the first external terminal and the second external terminal. The integrated circuit further comprises a malfunction prevention circuit provided in parallel with the first transistor between the first external terminal and the second external terminal, and having a discharging path connected to a gate of the first transistor. The malfunction prevention circuit discharges an electric charge charged in the gate via a parasitic capacitance between a gate and a drain of the first transistor correspondingly to a voltage variation between the first external terminal and the second external terminal, and prevents the first transistor from being turned on before an operation of the protection circuit. |
